【摘要】 GaN是一种具有优越热稳定性和化学性质的宽禁带半导体材料 ,这种材料及相关器件可以工作在高温、高辐射等恶劣环境中 ,并可用于大功率微波器件 .最近几年 ,由于GaN蓝光二极管的成功研制 ,使GaN成为了化合物半导体领域中最热门的研究课题 .简要介绍了GaN纳米线材料的制备技术 ;综述了GaN纳米线材料的制备结果和特性 .用CVD法研制的GaN纳米线的直径已经达到 5～ 12nm ,长度达到几百个微米 .纳米线具有GaN的六方纤锌矿结构 ,其PL谱具有宽的发射峰 ,谱峰中心在 42 0nm .GaN纳米线已经在肖特基二极管的研制中得到应用 .更多还原

【Abstract】 GaN is a kind of wide band gap semiconductor materials.The outstanding thermal and chemical stability of GaN enable it and its devices to operate at high temperature and in hostile environments,also makes it attractive to high microwave power application.During the last few years,since the field has been revolutionized by success in fabrication GaN blue LEDs, GaN qualify as the hottest topic in compound semiconductor research.The latest progress of the characteristics of GaN nanowires and their fabrication technology are reviewed in this paper. The diameter of the nanowires has been 5-12 nm, the length is about hundreds of micrometers. The nanowires are single crystal with hexagonal wurzite structure and their PL spectra show a broad emission peak centered at 420 nm. The GaN nanowires have been applied to fabricate the Schottky diode.更多还原