【摘要】 在实验室条件下对P型单晶硅片进行阳极电化学腐蚀制成多孔硅(PorousSilicon)样片,同时用适当配比的HNO3对多孔硅进行处理。通过荧光分光光度计测试并比较了HNO3作用前后样片的光致发光(PL)谱,结果发现用HNO3处理的多孔硅的发光效率有显著提高。另外,本文还对多孔硅以及HNO3处理的多孔硅的发光稳定性作了对比研究和探讨。更多还原

【Abstract】 PS samples used in this work were made with P-silicon by anodization method under experimental condition.It was used HNO₃ to deal with PS samples. Through analysis of their photoluminescence properties,and found that the photoluminescence intensity of those PS samples that were treated by HNO₃ had a significant improvement.It was got down to the stability of PS treated by HNO₃ and obtained a series of data.-更多还原