节点文献
不同剂量率下偏置对双极晶体管电离辐照效应的影响
Effects of Bias at Different Dose Rates on Ionizing Radiation Response of Bipolar Transistors
【摘要】 对双极晶体管进行了不同剂量率、不同偏置的电离辐照实验。结果表明,对于不同偏置条件,晶体管在低剂量率辐照下,电流增益都有更为明显的衰降;各种剂量率辐照下,电流增益在发射结反向偏置时比浮空偏置时有更为显著的下降。文章对相关机理进行了探讨。
【Abstract】 Ionizing radiation response of bipolar transistors at different dose rates and biases has been investigated. It has been shown that the current gain deteriorates significantly at low dose-rate for transistors at different bias conditions, and the degradation becomes more significant at emitter reverse bias than at floating bias when irradiated at different dose-rates. Possible mechanisms for these effects have also been discussed.
- 【文献出处】 微电子学 ,Microelectronics , 编辑部邮箱 ,2004年06期
- 【分类号】TN324.3
- 【被引频次】16
- 【下载频次】136