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不同剂量率下偏置对双极晶体管电离辐照效应的影响

Effects of Bias at Different Dose Rates on Ionizing Radiation Response of Bipolar Transistors

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【作者】 张华林陆妩任迪远崔帅

【Author】 ZHANG Hua-lin, LU Wu, REN Di-yuan, CUI Shuai(Xinjiang Institute of Physics and Chemistry, The Chinese Academy of Sciences, Urumqi, Xinjiang 830011, P. R. China)

【机构】 中国科学院新疆理化技术研究所中国科学院新疆理化技术研究所 新疆 乌鲁木齐 830011新疆 乌鲁木齐 830011新疆 乌鲁木齐 830011

【摘要】 对双极晶体管进行了不同剂量率、不同偏置的电离辐照实验。结果表明,对于不同偏置条件,晶体管在低剂量率辐照下,电流增益都有更为明显的衰降;各种剂量率辐照下,电流增益在发射结反向偏置时比浮空偏置时有更为显著的下降。文章对相关机理进行了探讨。

【Abstract】 Ionizing radiation response of bipolar transistors at different dose rates and biases has been investigated. It has been shown that the current gain deteriorates significantly at low dose-rate for transistors at different bias conditions, and the degradation becomes more significant at emitter reverse bias than at floating bias when irradiated at different dose-rates. Possible mechanisms for these effects have also been discussed.

【关键词】 双极晶体管偏置剂量率电离辐照
【Key words】 Bipolar transistorBiasDose rateIonizing radiation
  • 【分类号】TN324.3
  • 【被引频次】16
  • 【下载频次】136
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