【摘要】 提出了一种DMOS辐照正空间电荷阈值电压模型。基于沟道杂质的非均匀分布,借助镜像法,导出辐照正空间电荷与沟道电离杂质的二维场和二维互作用势;求解泊松方程,由此给出DMOS辐照正空间电荷阈值电压模型表示式。该模型的解析解与MEDICI仿真的数值解吻合。更多还原

【Abstract】 A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed. Based on the non-uniform distribution of the channel impurity, the distribution of 2-D electric field and 2-D interaction potential, which is caused by the interaction between the ionized impurity in the depletion layer and radiation induced positive spatial charge, is analyzed using image charge method. By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained. The results are in good agreement with those of the 2-D simulator MEDICI.更多还原