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氮气流量、基体温度对反应溅射(Ti,Al)N成膜影响

Effects of N2 Flow Rate and Substrate Temperature on (Ti, Al)N Films Deposited by Reactive Sputtering

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【作者】 刘昕余志明尹登峰苏伟涛杨莉

【Author】 LIU Xin, YU Zhi-ming, YIN Deng-feng, SU Wei-tao, YANG Li (School of Materials Science and Engineering, Central South University, Changsha 410083, Hunan, China)

【机构】 中南大学材料科学与工程学院中南大学材料科学与工程学院 湖南长沙410083湖南长沙410083湖南长沙410083

【摘要】 采用反应直流磁控溅射的方法 ,通过控制基体温度和N2 /Ar流量比 ,在WC 6%Co基体表面上成功地制备了 (Ti,Al)N薄膜。用AFM、XRD、显微硬度测试仪对薄膜的显微形貌、成分、显微硬度进行了测试。结果表明 ,在N2 /Ar流量比较低时薄膜存在明显的(Ti ,Al)N的 ( 111)织构 ,随着N2 /Ar流量比的增大 ,这种 ( 111)织构逐渐变弱 ,薄膜显微形貌发生较明显的变化 ,显微硬度也随之变化 ;N2 /Ar流量比超过某一门槛值时不能生成 (Ti,Al)N ;在一定范围内 ( 2 5 0~ 40 0℃ ) ,温度对薄膜质量的影响不是很明显。

【Abstract】 The (Ti, Al) N films were deposited on WC-6%Co carbide using reactive magnetron sputtering technique by controlling substrate temperature and N 2/Ar flow ratio. Morphologies, composition and micro-hardness of fims have been analyzed with AFM, XRD and micro-hardness detector. Results show that the film has apparent (Ti, Al)N(111) texture under the condition of low N 2/Ar flow ratio. And with the increase in N 2/Ar flow ratio, such (111)texture will gradually weaken resulting in a significant change in the microstructure of film and some change in micro-hardness. But (Ti, Al)N film can not be developed as the N 2/Ar flow ratio increases over a certain critical value. It is found that the substrate temperature has no significant impact on such film qualities at the range of 250 to 400 ℃.

【关键词】 (Ti,Al)N直流磁控溅射显微形貌织构
【Key words】 Ti, Al)ND C magnetron sputteringmicrostructuretexture
  • 【文献出处】 矿冶工程 ,Mining and Metallurgical Engineering , 编辑部邮箱 ,2004年05期
  • 【分类号】O484
  • 【被引频次】10
  • 【下载频次】149
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