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纳米压痕位移突变机理研究

MECHANISTIC STUDY ON NANOINDENTATION CREEP IN SINGLE CRYSTALS

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【作者】 乔利杰郜欣王玉桂宿彦京褚武扬

【Author】 QIAO LiJie GAO Xin WANG YuGui SU YanJing CHU WuYang(Department of Materials Physics, University of Science and Technology Beijing, Beijing 100083,China)

【机构】 北京科技大学材料物理与化学系北京科技大学材料物理与化学系 北京100083北京100083北京100083

【摘要】 用铁和ZnO单晶研究纳米压入时的位移突变和蠕变突变。结果表明 ,电解抛光的纯铁压入时会出现位移突变 ,突变前后的载荷—位移曲线明显不同 ,它对应表面膜破裂。而对于ZnO单晶来说 ,突变前后载荷—位移曲线变化不大 ,该突变意味着位错的爆发式发射。随加载速率降低 ,发生位移突变的临界载荷PC 也下降。当P >PC 恒载荷蠕变时 ,位移缓慢升高直至饱和 ,但无突变 ;如P <PC,恒载荷下保持一定时间就会发生蠕变突变 ,随后位移缓慢升高至饱和 ;如P <P (门槛载荷 ) ,则不发生蠕变和蠕变突变

【Abstract】 Excursion in depth during loading or creeping under sustained load of iron steel and ZnO single crystals as well as the effect of hydrogen have been investigated by means of nanoindentation. Results show that there is sudden excursion in displacement during nanoindentation in electropolished specimens. The curves are quite different before and after the excursion, which is ascribed to film breaking. The change of load and depth is little for the ZnO single crystal. This indicates that the excursion was caused by dislocation emission. The critical load P_C corresponding to the excursion decreased with decreasing the loading rate. During creeping under sustained load of P>P_C, the displacement will increase slowly to a saturation value, and no displacement burst. During creeping under sustained load of P<P_C, the displacement burst occurs after some waiting time, and then the creep displacement will increase slowly to a saturation value. If P<P~*, which calls as threshold load, no creep and no displacement burst occur.

【基金】 国家自然科学基金 ( 5 0 1 71 0 1 3;5 0 2 72 0 1 1 );重大基础研究规划项目 (G1 9990 65 0 )资助~~
  • 【文献出处】 机械强度 ,Journal of Mechanical Strength , 编辑部邮箱 ,2004年S1期
  • 【分类号】TG115
  • 【被引频次】3
  • 【下载频次】311
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