【摘要】 测试了各种工艺条件下真空电弧沉积 (VAD)的TiN薄膜的显微硬度 ,并研究了TiN薄膜硬度随基材、电弧电流、基片温度、氮气压力及负偏压的变化。实验结果表明 :在多数基材上 ,薄膜硬度均接近或超过 2 0GPa ,且薄膜的硬度与基材的硬度不呈比例关系 ,TiN薄膜的硬度随电流的增加有减少的趋势 ;在相当宽的温区内 ,TiN薄膜的硬度随温度上升而增大 ,而且在高温下的硬度值比低温时稳定 ,总体上 ,VAD比其它离子镀具有更宽阔的T区 ;在氮气压力为 0 .1Pa～ 1Pa的区域内 ,TiN薄膜的硬度稳定在 2 0MPa以上 ,而且适当的负偏压有利于提高TiN薄膜的硬度。更多还原

【Abstract】 We measured the microhardness of titanium nitride films obtained by vacuum arc deposition, and studid the relationship between the microhardness and the process Parameters such as substrate material, arc current, substrate temperature, partial pressure of nitrogen and substrate bias. The results show that the microhardness of TiN films exceeds 20GPa on most substrates. The microhardness decreases with increasing arc current due to the contamination of macro particles. But it increases with substrate temperature in a wide range and is more stable when the nitrogen pressure is in the range of 0.1 Pa～2 Pa, the microhardness of the TiN films is over 20MPa with further improvements at proper substrate bias.更多还原