【摘要】 在触媒KOV(FeNiCo合金 )的基础上加上一定含量的的Ti和Cu ,用温度梯度法首次在国产的六面顶压机上合成出～ 1 5mm高质量的Ⅱa型金刚石单晶。分析了合成Ⅱa型金刚石单晶过程中出现晶体表面熔坑现象的原因。晶种的质量和清洁度导致晶体表面熔坑的一个重要原因。通过降低晶体的生长速度可以避免熔坑的出现。更多还原

【Abstract】 High quality Ⅱa type diamond crystals of size ～1.5mm were synthesized by means of temperature-gradient-method at high pressure and high temperature in a China-made cubic anvil high-pressure apparatus,which is the first set of the type made in China. When a certain amount of Ti and Cu is added into the catalysis,cavitation would occur on the surface of the synthesized diamond crystals. The cleaness of the seed crystal is another factor of the cavity that appears on the surface of crystals. Reducing the growth rate of the crystal is suggested to avoid the cavitation.更多还原