【摘要】 介绍了一种电容式MEMS开关的制作工艺。所有的步骤都采用表面微加工工艺完成。其中 ,区别于常规采用的SixNy薄膜 ,笔者采用了高介电常数的Ba0 .5Sr0 .5TiO3 (BST )铁电薄膜作为开关的介电层 ,使“开”“关”状态电容比值大大提高 ,开关的插入损耗和隔离度性能得到提高。在制作工艺上 ,采用正胶作为牺牲层 ,并用发烟硝酸进行释放 ,获得了较好的效果。最终 ,制备了一种高性能的电容式MEMS开关。更多还原

【Abstract】 The study on fabrication process of a high k capacitive MEMS switch is presented.The device is completed with modified surface micromachining technology.Instead of commonly used Si_xN_y,Ba_0.5Sr_0.5TiO₃（BST）,a kind of high dielectric material is used,as insulating layer of the switch.As a result, the “on”“off” capacitance ratio is greatly increased,and the S parameter of switch is improved.Photoresist is utilized as sacrificial layer in the process,which is removed by fuming nitric acid.Based on the BST materials and the process,a high performance MEMS switch is realized.更多还原