【摘要】 在厚膜多孔硅 (PS) /氧化多孔硅 (OPS)衬底上 ,结合聚酰亚胺涂层改善表面 ,研制低损耗、高性能射频 (RF) /微波 (MW)共平面波导CPW(CoplanarWaveguide) .通过在N和P型硅上形成不同厚度PS膜 ,并对其上的CPW进行分析比较 ,厚膜PS与石英的共面波导插入损耗非常接近 ,远小于在 2 0 0 0Ω·cm高阻硅上形成的多晶硅 -氧化硅组合衬底 :在 0 33GHz范围 ,插入损耗小于 5dB/ 1.2cm ;33 4 0GHz范围 ,小于 7.5dB/ 1.2cm .更多还原

【Abstract】 Low loss and high performance RF/microwave CPW(coplanar waveguide)were fabricated on thicker porous silicon(PS)/ oxidized porous silicon(OPS) substrate associated with polyimide coating to improve smoothness. PS films with different thickness were formed on both N and P-type Si, and the CPW losses on them were discussed. The CPW loss on thick PS is intimately close to quartz, and much lower than the combined substrate of poly-Si / oxidized poly-Si growing on a 2000Ω·cm Si wafer. The insertion loss on PS was lower than 5dB/1.2cm in the range of 0-33GHz, and less than 7.5dB/1.2cm in 33-40GHz.更多还原