【摘要】 在Si( 111)衬底上利用等离子体辅助分子束外延 (P MBE)生长氧化锌 (ZnO)薄膜 ,研究了在不同衬底生长温度下 ( 35 0～ 75 0℃ )制备的ZnO薄膜的结构和光学性质 .随着衬底温度的升高 ,样品的X射线及光致发光的半高宽度都是先变小后变大 ,衬底温度为 5 5 0℃样品的结构及光学性质都比较好 ,这表明 5 5 0℃为在Si( 111)衬底上生长ZnO薄膜的最佳衬底温度 ;同时 ,我们还通过 5 5 0℃样品的变温光致发光谱 ( 81～ 30 0K)研究了ZnO薄膜室温紫外发光峰的来源 ,证明其来源于自由激子发射更多还原

【Abstract】 Plasma assisted molecular beam epitaxy was employed to prepare ZnO thin films on Si(111) substrate. In order to look for the optimal substrate temperature for growth of ZnO thin films, the dependence of the quality of ZnO thin films on substrate temperature ranging from 350℃ to 750℃ was studied by X ray diffraction(XRD) and photoluminescence(PL) spectra analysis. The full width at half maximum (FWHM) of XRD and PL spectra become narrower and then wider, a preferred oriented ZnO thin film on Si substrate was obtained at 550℃. The PL spectra show a strong ultraviolet(UV) band emission with a weak deep level emission. The origin of the UV band is from free excition recombination, testified by the temperature dependent PL spectra in the rang of 81K～300K.更多还原