【摘要】 采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.相关研究表明退火对p型GaP和p型AlGaInP载流子浓度有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5 6×1018cm-3增大到6 5×1018cm-3,p型AlGaInP层的空穴浓度由6 0×1017cm-3增大到1 1×1018cm-3.这可能是由于退火破坏了Mg-H复合体,恢复了Mg受主的活性导致的.更多还原

【Abstract】 The AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 LP-MOCVD. The influences of thermal annealing to the characteristics of p-GaP and p-AlGaInP layer were studied. Compared with the grown sample, the hole carrier concentration of GaP layer in LED wafer increased from 5.6×10¹⁸ cm^-3 to 6.5×10¹⁸ cm^-3, and the hole carrier concentration of AlGaInP layer increased from 6.0×10¹⁷ cm^-3 to 1.1×10¹⁸ cm^-3, when wafer was annealed under 460 ℃ for 15 minutes.更多还原