【摘要】 采用磁控溅射方法在Si（100）衬底上淀积纯铁薄膜,在不同温度下（200—400℃）硫化10h得到FeS₂薄膜,并对其进行晶体结构和表面成分分析。X射线光电子能谱（XPS）研究表明:低温硫化时易生成硫单质相,随温度的升高,S单质相部分参加反应变为FeS₂相,FeS₂的S₂p峰出现在低能位置,而遗留的单质S的S2p束缚能位置不变。卢瑟福背散射（RBS）测得400℃时薄膜中元素Fe/S接近FeS₂的理想化学计量比。更多还原

【Abstract】 Fe layers prepared by magnetron sputtering on Si（100） substrates have been sulfurized thermally to form FeS₂ thin films at different temperatures （200—400℃） for 10 hours. The structural and surface properties of FeS₂ have been studied. The results of XPS have shown that sulphur would exist at low temperature. When the iron film is sulfurized at high temperature, sulphur would change into pyrite, but small amount of sulphur would still remain on top of the film. The ratio of iron to sulphur is very close to its stoichiometric proportion according to RBS spectrum at 400℃.更多还原