【摘要】 比较了CC4007电路栅介质中注F1和未注F1的NMOS晶体管在不同偏置辐照和不同环境退火的行为,结果表明,栅介质中F1的引入能明显降低器件的辐照敏感性,提高器件的可靠性能。表现为在同样辐照偏置下注F1器件比未注F1器件的阈电压漂移小,辐照后退火期间的界面态、氧化物电荷变化稳定。更多还原

【Abstract】 The influences of irradiation condition, annealing temperature and gate bias on CC4007 NMOS FETs, with and without F+ implanted, have been compared. It is found that the radiation-induced shift of threshold voltage can be restrained by implanting minute amount of fluorine ions. And , reliability of the F+ implanted devices was verified by smooth changes of both interface state charge and oxide state charge during the annealing.更多还原