【摘要】 X射线光刻相对于其他下一代光刻技术而言有许多优点,比如其工艺宽容度大、成品率高、景深大、曝光视场大、成本低等,更为重要的是,其技术已经比较成熟。对于 100nm 同步辐射 X 射线光刻系统而言,它采用的波长通常为 0.7—1.0nm,而当光刻分辨率达到 50nm 以下时,采用的同步辐射 X 射线波长范围应该为 0.2—0.4 nm。探讨了在北京同步辐射 3B1A 光刻束线上进行 50nm X 射线光刻的可能性。更多还原

【Abstract】 Compared to other Next Generation Lithography ( NGL) techniques, X-ray lithography has many ad- vantages, such as large process latitude, high throughput, extremely long depth of focus, large exposure field sizes, and low cost, and the more important thing is that X-ray lithography technology is relatively mature. For 100 nm resolution synchrotron radiation X-ray lithography system, its wavelength is in the range of 0.7—1.0 nm; and when the resolution is below 50 nm, its wavelength should be in 0.2 nm to 0.4 nm. In this paper, the possibility of designing a 50 nm resolution X-ray lithography system for Beijing Synchrotron Radiation Facility 3B1A beamline is discussed.更多还原