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高能136Xe离子辐照聚酰亚胺化学改性的电子能损效应

Electronic energy loss effects on chemical modification of polyimide induced by high energy xenon ions

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【作者】 孙友梅朱智勇金运范王志光侯明东

【Author】 SUN Youmei ZHU Zhiyong JIN Yunfan WANG Zhiguang HOU Mingdong ( Institute of Modern Physics, the Chinese Academy of Sciences, Lanzhou 730000 )

【机构】 中国科学院近代物理研究所中国科学院近代物理研究所 兰州730000兰州730000兰州730000

【摘要】 用1.755GeV136Xe离子在真空室温环境下辐照叠层聚酰亚胺薄膜,通过红外和紫外光谱测量研究了高电子能损离子辐照引起的化学降解及炔基产生效应。红外测量结果表明,典型官能团随辐照注量的增加指数降解,且径迹芯中所有官能团均遭到破坏,对应8.8(最小能损,第一层)和11.5keV/nm(最大能损,第五层)电子能损,136Xe辐照聚酰亚胺的平均降解半径分别为3.6和4.1nm。而相应能损条件下炔基的生成截面分别为5.6和5.9nm大于官能团的降解截面。紫外结果表明辐照引起的吸光度的改变随辐照注量线性增加,发色团的产生效率随电子能损的增大而增加。

【Abstract】 Stacked polyimide (PI) films of about 25 μm in thickness were irradiated with 1.755 GeV xenon ions under vacuum at room temperature. The chemical changes of modified PI films were studied by Fourier transform infrared (FTIR) and ultraviolet/visible (UV/Vis) absorption spectroscopy. The FTIR results show that the absorbance of the typical function groups decreases exponentially as a function of fluence. Under 8.8 keV/nm (minimum) and 11.5 keV/nm (maximum) electronic energy loss of 136Xe irradiation, the mean degradation radius of all function groups in PI is 3.6 and 4.1 nm, respectively. The alkyne end group was found after irradiation and its formation radius was 5.6 nm and 5.9 nm corresponding to 8.8 keV/nm and 11.5 keV/nm, respectively. The UV/Vis analysis indicates the radiation induced absorbance change follows a linear relation with fluence, and the production efficiency of chromospheres depends strongly on the electronic energy loss ( d E / d X ) e.

【基金】 中国科学院九五重点项目(KJ952-423) ;西部之光基金资助
  • 【分类号】O631
  • 【被引频次】2
  • 【下载频次】113
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