【摘要】 一方面介绍了利用线性响应理论能够预估MOS器件空间低剂量率的辐射响应,并得出在相同偏压下,高剂量率辐照加室温退火所引起的阈值电压漂移量在误差允许的范围内等于低剂量率辐照的漂移量,两者总的时间相等;另一方面对美军标1019.4实验程序进行了重新评估,对氧化物陷阱电荷和界面态效应的评估方面给出了一些建议。更多还原

【Abstract】 MOS device in space low-dose radiation response can be predicted by using linear system theory techniques. According to the prediction result, under same bias conditions during radiation and anneal, the threshold-voltage shifts caused by high dose-rate irradiations following room temperature anneal were equal to that of low-dose-rate irradiations within the limits of error, but both total times were same. On the other hand, we re-evaluated the method 1019.4 test procedure. And some advice on evaluating the oxide trapped charge and interface trapped charge effect are given.更多还原