【摘要】 采用离子束和磁控溅射技术制备了Ni80 Fe2 0 /Al2 O3/Ni80 Fe2 0 磁性隧道结样品 ,主要研究了中间绝缘层对隧道结磁电阻效应的影响 .结果表明 ,中间氧化物的厚度对磁电阻值起调节作用 ,在 3～ 7nm范围内磁电阻基本呈现单调递减现象 .为提高磁隧道结磁电阻性能做了实验尝试更多还原

【Abstract】 The samples of the Ni 80 Fe 20/Al 2O 3/Ni 80 Fe 20 magnetic tunnel junction were prepared with the ion beam sputtering and magnetron sputtering technique. The analysis of The relationship between TMR and insulating barrier. The result shows that TMR value decreases progressively with the increase of thickness of insulating barrier within 3 to 7nm. It offers a try for developing the performance of the magnetic tunneling junction on the experiment.更多还原