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SBN60铁电薄膜横向电光系数及M-Z波导半波电压的研究
Measurement of electro-optic coefficients in SBN60 and their applications in M-Z type waveguide modulators
【摘要】 主要介绍MgO衬底上掺K和不掺K的SBN60铁电薄膜的横向电光系数r51的测量,并由此设计一种MgO衬底上M-Z型薄膜波导调制器,并计算出此种波导调制器的半波调制电压,实验说明掺入K离子能减少其半波调制电压。
【Abstract】 High-quality z-axis oriented SBN60 thin films on MgO（001） substrates have been grown by sol-gel process, The transverse electro-optic coefficients r51 of the SBN60 and potassium ion doped SBN60 thin films were measured respectively. M-Z type waveguide modulators made of SBN60 thin films were designed. The half-wave modulation voltage was demonstrated to be decreased with the K ion doping.
【关键词】 横向电光系数；
M-Z薄膜波导调制器；
半波调制电压；
【Key words】 transverse electro-optic coefficient； M-Z type modulator； half-wave modulation voltage；
【Key words】 transverse electro-optic coefficient； M-Z type modulator； half-wave modulation voltage；
【基金】 浙江省自然科学基金资助项目(500077)。
- 【文献出处】 光学仪器 ,Optical Instruments , 编辑部邮箱 ,2004年02期
- 【分类号】O484.4
- 【被引频次】1
- 【下载频次】74