【摘要】 以硅单晶为靶材 ,高纯的Ar和O2 气分别为溅射气体和反应气体 ,采用射频磁控反应溅射法 ,在蓝宝石衬底上制备了SiO2 薄膜 ,溅射的工艺参数范围是 :射频功率为 5 0～ 1 0 0W ,样品托背面温度为 2 5～ 40 0℃ ,沉积速率为 4～ 6nm/min。对影响薄膜质量的工艺参数进行了分析 ,探索出使蓝宝石镀膜后的红外透过率有最大幅度提高的最佳工艺条件。结果表明 ,所制备的SiO2 薄膜与蓝宝石衬底结合牢固 ;在 3～ 5 μm波段对蓝宝石衬底有明显的增透作用。与其它镀膜技术相比 ,射频磁控反应溅射法可以在较低的温度下制备出SiO2 薄膜。更多还原

【Abstract】 Using Si single crystal as target, Ar and O₂ as sputtering gas and reacting gas, respectively, SiO₂ thin film was successfully prepared on sapphire substrate by radio frequency （RF） magnetron reactive sputtering method. The range of technology parameters for sputtering SiO₂ film are: RF power 50-100 W, substrate temperature 25-400 ℃, deposition rate 4-6 nm/min. Technical process for got the utmost value of the enhancement of infrared transmittance of sapphire after coating was obtained from investigating the technology parameters, which affect the optical properties of SiO₂ films. The results show that the SiO₂ film obtained in this technical process is firm joining between SiO₂ film and sapphire substrate and a high antireflective effect on sapphire substrate at the wavelength of 3-5 μm. By the way, comparing with other coating technology, the film can obtained at lower temperature by RF magnetron reactive sputtering method.更多还原