【摘要】 研究了添加MgO的Ba0.6Sr0.4TiO3(BSTO)可调谐微波器件用铁电陶瓷材料的结构和低频下的介电性能。结果发现:随着MgO添加量的增加,BSTO材料的相对介电常数大幅度下降,材料的密度和可调性也随之降低。SEM和XRD结果表明:随MgO添加量的增加,材料晶粒尺寸减小,体系的晶胞参数略有下降,MgO在BSTO中以独立相的形式存在。制备出了相对介电常数较低(εr=181),介质损耗达4.7×10-3(在频率为10kHz时),可调性为10.26%(电场为2.2kV/mm)的适用于制作移相器的BSTO铁电陶瓷材料。更多还原

【Abstract】 Crystal structure and dielectric properties at low frequency of Ba_0.6Sr_0.4TiO₃（BSTO）ceramics doped with MgO were investigated by means of SEM,XRD and property measurement. The results show that with the increase of MgO doping （amount） the relative dielectric constant, density and tunability of the BSTO ceramics at room temperature decrease, and the grain size and the crystal cell parameter of BSTO ceramics reduce. MgO presents in BSTO as a separate phase. BSTO ferroelectric ceramic material suitable for phase shifter was prepared with a relative low dielectric constant ε_r=181,and other useful dielectric properties such as dielectric loss tanδ=4.7×10^-3（at 10 kHz）,tunability=10.26%（at electric field E=2.2 kV/mm）.更多还原