【作者】
薛迎红；
王清月；
张志刚；
柴路；
王专；
韩英魁；
孙虹；
李静；
王继扬；
王勇刚；
马骁宇；
宋宴荣；
【Author】
Yinghong Xue, Qingyue Wang, Zhigang Zhang Lu ChaiZhuan Wang, Yingkui Han, Hong Sun, Jing LiJiyang Wang , Yonggang Wang, Xiaoyu Ma, and Yanrong SongVltrafast Laser Laboratory, School of Precision Instruments and Optoelectronics Engineering, Tianjin University; Key Laboratory of Optoelectronic Information Technical Science (Tianjin), EMC, Tianjin 300072Department of Applied Physics, Tianjin University, Tianjin 300072 State Key Laboratory of Crystal Materials, Shandong University, Ji’nan 250100Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 School of Applied Mathematics and Physics, Beijing University of Technology, Beijing 100022
【机构】
Ultrafast Laser Laboratory, School of Precision Instruments and Optoelectronics Engineering, Tianjin University；
Key Laboratory of Optoelectronic Information Technical Science (Tianjin), EMC, Tianjin 300072,Ultrafast Laser Laboratory, School of Precision Instruments and Optoelectronics Engineering, Tianjin University；
Key Laboratory of Optoelectronic Information Technical Science (Tianjin), EMC, Tianjin 300072,Ultrafast Laser Laboratory, School of Precision Instruments and Optoelectronics Engineering, Tianjin University Key Laboratory of Optoelectronic Information Technical Science (Tianjin), EMC, Tianjin 300072,Ultrafast Laser Laboratory, School of Precision Instruments and Optoelectronics Engineering, Tianjin University Key Laboratory of Optoelectronic Information Technical Science (Tianjin), EMC, Tianjin 300072,Department of Applied Physics, Tianjin University, Tianjin 300072,State Key Laboratory of Crystal Materials, Shandong University, Ji’nan 250100,State Key Laboratory of Crystal Materials, Shandong University, Ji’nan 250100,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,School of Applied Mathematics and Physics, Beijing University of Technology, Beijing 100022；
【摘要】 <正> A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated. The measured pulse duration is 1.98 ps at the wavelength of 1044 nm. The maximum average power reaches 45 mW.更多还原
【Abstract】 A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated. The measured pulse duration is 1.98 ps at the wavelength of 1044 nm. The maximum average power reaches 45 mW.更多还原
【基金】 work was supported by the National Key Basic Research Special Foundation of China (No. G1999075201-2);the National Natural Science Foundation of China (No. 69978007, 60178008).
