【摘要】 分析了MOCVDAlGaAs/GaAsHBT外延材料生长中基区、发射区异质结界面与P N结界面产生偏离的原因 ,计算了外延生长参数对结偏离的影响 ,得到了对于C、Mg及Zn作为P型掺杂剂时 ,使得结偏位为 0时所需生长的GaAsspace层厚度 ,它们分别为 1～ 1.5nm、3～ 4nm及 12～ 15nm。计算与器件研制结果基本相符。更多还原

【Abstract】 The reasons of deviation of base-emitter P-N junction relative to the AlGaAs/GaAs heterojunction in LP-MOVPE growth of AlGaAs/GaAs HBT were analyzed. The effect of growth parameters on the deviation was calculated. The optimum thicknesses of space layer were 1.0～1.5 nm, 3.0～4.0 nm and 13～15 nm for C, Mg and Zn dopant, respectively. The values calculated were in agreement with the results from the devices.更多还原