【摘要】 提出了 MOS电容线性电压扫描法测量半导体少子产生寿命的新方法。通过在 MOS C-t瞬态曲线上读取 n个不同时刻的电容值 ,确定出相应的少子产生寿命值。该方法基于最小二乘法原理 ,可有效地消除测量误差的影响 ,其精度随读取点的增加而提高 ,特别适合于少子产生寿命的计算机辅助测量。更多还原

【Abstract】 An improved technique of determining minority carrier generation lifetime in semiconductor from C-t transient curve of a MOS capacitor under linear voltage ramp bias was developed. By reading out several values of high frequency MOS capacitance at different time from the C-t transient curve, the minority carrier generation lifetime could be determined based on the method of least squares. The error in measuring could be eliminated effectively and the precision of the evaluated generation lifetime would be improved, moreover, the greater the number of points read out, the higher the precision. The technique was especially suitable for computer-aided measurement.更多还原