【摘要】 用 Cu、In、Se三元扇形复合靶 ,采用射频磁控反应溅射技术 ,在低温 Indium Tin Oxide( ITO)透明导电基片上制备大面积均匀圆柱形 Cu In Se2 ( CIS)量子点。制备材料的化学计量比可通过三种单质的面积比率来调节。该制备方法具有成本低、操作简单、易于大型化等优点。平均量子点的大小可控制在 40到 80 nm之间 ,可通过改变溅射参数、ITO膜的晶相结构与表面形貌等因素来调节。更多还原

【Abstract】 Large-scale uniform and cylindrical CuInSe 2(CIS) quantum dots have been prepared by RF reactive magnetron sputtering from fan-shaped ternary compound target on ITO substrates at low temperatures. The stoichiometry of the dots can be conveniently controlled by the area ratios of ternary elements and sputtering parameters. The technique features lower cost, easy to operate, and is suitable to large-scale production lines. The average lateral size of the dots can be varied between 40 and 80 nm by appropriate choices of substrate temperature, power density, and total CIS coverage.更多还原