【摘要】 单边高压器件具有源、漏电阻不对称且与工作电压成非线形的依赖关系的特点 ,文中提出一种单边高压 MOS器件的模型 ,在不改变 BSIM3 V3模拟模型方程的基础上 ,对 BSIM3 V3模型参数的物理意义和取值进行重新的定义来表示单边高压器件的这些特点。同时使用模型参数提取软件 BSIMPro提取了该模型的参数 ,模拟结果与实验数据进行拟合 ,两者符合得很好 ,证明了改进模型的可行性。更多还原

【Abstract】 In this paper,a new method of modeling uni-directional HV-LDMOS devices based on the common BSIM3V3 model is presented.We assign the physical meanings and values of three model parameters different from the original BSIM3V3 model without changing any equation to simulate the characteristics of uni-directional HV-LDMOS devices.The way of accurately parameters extraction is given.At last we show the simulation results using the proposed model,which fit the measured results very well and prove the feasibility of our proposed modeling technique.更多还原