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掺杂ZnO-B2O3低温烧结BiNbO4介质陶瓷的研究

A Study on Low Temperature Sintered BiNbO4 Dielectric Ceramics Doped by ZnO-B2O3

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【作者】 张启龙杨辉魏文霖王信权陆德龙

【Author】 Zhang Qilong Yang Hui Wei Wenling Wang Xinquan Lu Delong(Dept. of Material Science and Chemical Engineering , Zhejiang University,Hangzhou 310027; Zhejiang Zhengyuan Electric CO., Ltd, Jiaxing 314003)

【机构】 浙江大学材料与化工学院浙江正原电气股份有限公司浙江正原电气股份有限公司 杭州 310027杭州 310027嘉兴 314003嘉兴 314003

【摘要】 研究了烧结助剂ZnO-B2O3对BiNbO4陶瓷烧结特性及介电性能的影响。结果表明:ZnO-B2O3形成晶界玻璃相存在于晶粒之间,促进烧结,大幅度降低BiNbO4陶瓷的烧结温度,促使瓷体晶粒尺寸均匀和致密;但ZB的质量分数大于3%,阻碍晶粒长大,破坏晶体结构和排列,导致材料的缺陷和本征损耗增加,从而降低材料的介电性能。ZnO-B2O3的掺杂量以1%为最佳,在880℃保温4h,可达到97%理论密度,在100MHz测试频率下,εr=42,tanδ<1.5×10-3。

【Abstract】 The influences of ZnO - B2O3 doping on the sintering behaviour and dielectric properties were investigated. The results indicated that the ZnO - B2O3 additive, appeared at grain boundary and acted as sintering aid, could effectively lower the singtering temperature of BiNbO4 ceramics. When ZnO - B2O3 exceeded 3wt%, It restrianed the grain growth, destroyed the crystal lattice , increased fault and dielectric loss, resulted in the degradation of densities and dielectric properties of BiNbO4 ceramics. 1wt% ZnO - B2O3 addition was selected as proper sintering aid to reduce the sintering temperature. At 880℃ for 4 hour, the 97% theoretical density can be obtained, the dielectric properties of the ceramic are εr = 42,tanδ <1. 5×10-1(100MHz)

【基金】 浙江省重大科技攻关基金项目(0221101562)
  • 【文献出处】 硅酸盐通报 ,Bulletin of the Chinese Ceramic Society , 编辑部邮箱 ,2004年04期
  • 【分类号】TQ174
  • 【被引频次】24
  • 【下载频次】204
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