【摘要】 研究了多孔硅(PS)吸附有机溶剂分子后对多孔硅荧光谱的淬灭效应。结果表明:淬灭多孔硅发光的有机溶剂分子是极性分子,有机溶剂分子的极性不同对多孔硅发光的淬灭程度也不同,且有些有机溶剂分子吸附氧化多孔硅比吸附多孔硅引起的发光淬灭具有更好的可逆性和选择性;用含有胺基的正丁胺(CH3CH2CH2CH2-NH2)作碳源,用射频辉光放电等离子系统在多孔硅表面沉积c n膜对多孔硅进行钝化处理后发现:其电致发光强度明显增强,发光峰位兰移,且在大气中存放60天后,其电致发光谱强度基本不衰减,峰位不再移动。经钝化处理的器件较未经处理的器件具有小的串联电阻Rs和低的驱动电压。这为提高多孔硅的传感特性提供了一种新方法。更多还原

【Abstract】 The luminescence quenching effect of porous Si caused by adsorbing organic moleculars are investigated. It indicates that the solvent molecules of quenching luminescence are polarized molecules and the different polarity determines the different quenching, and the quenching caused by molecules absorbed of oxide porous Si has better reversibility and selectivity than that of porous Si. By using n-butylamine as carbon resource, carbon-nitrogen(c-n) film was deposited on the p-n junction(p-n) porous Si surface by means of a radio-frequency glow discharge plasma system. Electroluminescence (EL) intensity enhancement and EL peak blueshift of the passivated porous Si are observed experimentally. Further, the intensity decay and the peak blueshift of porous Si are not observed after storing 60 days in the atmosphere. The current-voltage characteristics show that the series resistance Rs and driven voltage in the ITO/c-n/p-n porous Si diode is reduced greatly compared with the ITO/p-n porous Si diode. It provides a new method for improving sensing characteristics of porous Si.更多还原