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6H-SiC辐照特性的低温光致发光研究
Low-Temperature Photoluminescence Studies on The Characteristics of Irradiated 6H-SiC
【摘要】 本文用低温光致发光(LTPL)技术对经中子辐照的N型6H-SiC在350℃-1650℃温度范围的退火行为进行了研究。在700℃退火后观察到D1中心(D1-center)和位于485.0nm、493.6nm处的发光中心。我们发现D1中心与深能级瞬态谱(DLTS)的E1/E2深能级对具有不同的退火行为,这否定了它们源于相同的辐照诱生缺陷的观点。D1中心可能源于由空位和反位组成的复合体。
【Abstract】 In this article, low temperature photoluminescence (LTPL) measurements have been performed on neutron irradiated and post-annealed n-type 6H-SiC, the annealing temperature was from 350℃ to 1650℃. D1-center defect and two luminescence center which light at (485.0nm) and 493.6nm were observed after annealing above 700℃. These thermal behaviors of the D1-center are different from the E1/E2 in deep-level transient spectroscopy (DLTS) spectra, which argues against the identification that D1-center and E1/E2 originate from the same defect. We relate D1-center to the complexes of vacancies and antisites.
- 【文献出处】 光散射学报 ,Chinese Journal of Light Scattering , 编辑部邮箱 ,2004年01期
- 【分类号】O4723
- 【被引频次】7
- 【下载频次】190