【摘要】 本文用低温光致发光(LTPL)技术对经中子辐照的N型6H-SiC在350℃-1650℃温度范围的退火行为进行了研究。在700℃退火后观察到D1中心(D1-center)和位于485.0nm、493.6nm处的发光中心。我们发现D1中心与深能级瞬态谱(DLTS)的E1/E2深能级对具有不同的退火行为,这否定了它们源于相同的辐照诱生缺陷的观点。D1中心可能源于由空位和反位组成的复合体。更多还原

【Abstract】 In this article, low temperature photoluminescence （LTPL） measurements have been performed on neutron irradiated and post-annealed n-type 6H-SiC, the annealing temperature was from 350℃ to 1650℃. D₁-center defect and two luminescence center which light at （485.0nm） and 493.6nm were observed after annealing above 700℃. These thermal behaviors of the D₁-center are different from the E₁/E₂ in deep-level transient spectroscopy （DLTS） spectra, which argues against the identification that D₁-center and E₁/E₂ originate from the same defect. We relate D₁-center to the complexes of vacancies and antisites.更多还原