【摘要】 采用双离子束溅射技术制备了Si和C共掺杂的SiO2薄膜,在N2气氛下进行了不同温度的退火处理。分析了样品在室温下的光致发光(PL)特性,在该样品中观察到分别位于410nm和470nm的两个发光峰。这两个发光峰的强度随着退火温度的变化呈现不同的变化趋势,表明两个发光峰的来源并不相同。用XRD和FTIR测试手段分析了样品的结构,认为470nm的发光来源于中性氧空位缺陷(O3≡Si-Si≡O3),而410nm的发光来源于Si1-xCx纳米晶粒与SiO2基质之间的界面缺陷。更多还原

【Abstract】 The Si-and C-co-doped SiO2 films were prepared by dual ion beam sputtering techniqueon p-Si substrate from a SiO2/Si+C composite target. And then they were annealed in N2 ambience atdifferent temperature. There are two photoluminescence (PL) bands at 410nm (violet band) and 470nm(blue band) observed from the as-deposited and annealed samples. The variation tendency of the PLintensity for the two bands versus annealing temperature is different from each other, which suggestthat the two bands have different photoluminescence origins. Fourier transform infrared (FTIR) spectra,and X-ray diffraction (XRD) were used to characterize the microstructure. It is suggested that the 470nm PL band originate from the neutral oxygen vacancy defect, while the 410nm PL band mayoriginate from the defects at interface between nanocrystal Si1-xCx and SiO2 matrix.更多还原