节点文献
基于碳纳米管的晶体管及其集成的研究进展
Research and development of carbon-nanotube transistors and related integration
【摘要】 基于碳纳米管的场效应晶体管是目前研究的热点,是所有分子电子学器件中最有可能取代MOSFET,并维持摩尔定律的器件。本文对其基本原理、发展状况和重要性进行了简述,着重介绍了目前常用的撒落法和催化剂定位方法制备碳纳米管场效应管的工艺流程以及结果,并介绍了碳纳米管的掺杂以及相关集成的研究进展。
【Abstract】 Carbon nanotube field-effect transistors have a promising future in molecular devices. The basic principle, status of development, and importance of carbon nanotube transistors are analyzed, especially fabrication process and characteristics of devices made by spur method of grown method. Also the development of CNT - doping and integration are reported.
【关键词】 碳纳米管;
场效应;
晶体管;
集成;
掺杂;
【Key words】 carbon nanotube; field- effect; transistors; doping; integration;
【Key words】 carbon nanotube; field- effect; transistors; doping; integration;
- 【文献出处】 功能材料与器件学报 ,Journal of Functional Materials and Devices , 编辑部邮箱 ,2004年02期
- 【分类号】TN32
- 【被引频次】12
- 【下载频次】690