【摘要】 比较研究了GaAs背面通孔腐蚀中的湿法腐蚀和ICP干法刻蚀技术,并利用感应离子耦合（ICP）干法刻蚀技术,采用CCl₂F₂/Ar混合气体,对GaAs衬底上的通孔工艺进行了研究。通过优化气压、射频功率、CCl₂F₂/Ar混合气体组分配比,在CCl₂F₂流量为200sccm,Ar流量为10sccm,源功率P_s=400W,偏压功率P_b=14W,自偏压V_b=120V,真空度P=43Pa时,得到了表面平滑的通孔形貌和最大的通孔刻蚀速率（4.3μm/min）。更多还原

【Abstract】 Wet chemical etching techniques for etching via holes through GaAs substrates were comparied with an inductively coupled plasma （ICP） dry etching process. The latter was developed to etch via holes through GaAs substrates by using CCl₂F₂/Ar gas mixtures. By optimizing the pressure, RF power, CCl₂F₂/Ar ratio, a smooth via profile and a maximum etching rate （4.3txm/min） are achieved at 43Pa with CCl₂F₂ of 200seem, Ar of 10sccm, source power of 400W, bias power of 14W and self-bias of 120V.更多还原