【摘要】 用电子束蒸发氧化铪靶的方法,在SOI(绝缘体上硅)材料上制备了氧化铪薄膜,随后在氮气中进行快速退火(600℃,300s)。借助掠角X射线衍射(GAXRD)、X射线光电子能谱(XPS)、高分辨透射电镜(HRTEM)技术分析了样品的微观结构,研究了样品在退火前后发生的组成及结构变化,结果表明退火后氧化铪薄膜由退火前的非晶态转变为单斜结构的多晶态,薄膜中的O/Hf原子比较退火前更接近化学计量比2。借助扩展电阻探针(SRP)技术考察了退火前后薄膜的电学性能,证明在SOI材料上制备的多晶氧化铪薄膜同样具有较好的电介质绝缘性能。更多还原

【Abstract】 Hafnium oxide films were grown on SOI （silicon-on-insulator） materials by electron beam evaporation of HfO₂ target and followed by rapid annealing in nitrogen （600℃, 300s）. In order to study the change of composition and structure of the samples before and after annealing, glancing-angle X-ray diffraction （GAXRD）, X-ray photoelectron spectroscopy （XPS） and high-resolution transmission electron microscope （HRTEM） were used to investigate the samples. Analysis results showed that hafnium oxide films became polycrystalline phase in monoclinic structure from amorphous phase and the O/Hf ratio approached to stoichiometric proportion, i.e., 2 after annealing. In the end, spreading resistance profiles （SRP） showed excellent dielectric properties for hafnium oxide films whenever amorphous or polycrystalline.更多还原