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镧掺杂对PZT铁电薄膜漏电学特性的影响
The effects of lanthanum′s doping on PZT thin film leakage current characteristics
【摘要】 研究了镧掺杂对PZT铁电性能和相结构的影响。研究表明镧掺杂增加了(110)和(200)峰的强度,减小了(111)峰的相对强度,导致矫顽场和极化强度的下降。研究了镧掺杂对漏电特性的影响,以及肖特基势垒电流模型。
【Abstract】 In this paper we study the Lanthanum doping effects on ferroelectric properties and structures phase of PZT thin film. XRD indicates that Lanthanum addition increases (110) and (200) diffraction intensity and decreases the relative intensity of (111) diffraction peak which leads the reduction of coercive field and polarization strength of PZT thin film. The effects of Lanthanum doping on leakage current characteristics were also studied by Shottky model.
【关键词】 PZT;
矫顽场;
极化强度;
漏电模型;
【Key words】 PZT; coercive field; polarization strength; leakage current model;
【Key words】 PZT; coercive field; polarization strength; leakage current model;
【基金】 国家自然科学基金资助项目(60206005);上海青年科技基金资助项目(02QD14009)
- 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2004年06期
- 【分类号】O484.4
- 【被引频次】7
- 【下载频次】204