【摘要】 室温条件下,用低能离子束外延制备了GaAs∶Gd薄膜,X射线衍射(XRD)结果表明除了GaAs衬底峰没有发现其它新相的衍射峰,并借助于高分辨X射线衍射(HR XRD)进一步分析了晶格常数的变化特点。俄歇电子能谱(AES)分析了样品表面的成分,及元素随深度的分布规律,在60nm深处元素的相对含量发生明显改变,运用原子力显微镜(AFM)揭示了样品表面的形貌特点。更多还原

【Abstract】 GaAs∶Gd film was fabricated on GaAs (100) substrate by ion beam epitaxy technique at room temperature. There was no new peak found except the GaAs substrate main peaks from the X-ray diffraction results. The lattice change was further measured with the help of high-resolution X-ray diffraction. Surface components and depth profiles were analyzed by auger electron spectra. It was shown that the proportion of main components changed at the depth of 60nm from the results while surface morphology was imaged by atomic force microscopy.更多还原