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外延薄膜生长的实时监测分析研究

Study of real time monitoring epitaxial thin film growth

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【作者】 李金隆张鹰邓新武刘兴钊陶伯万李言荣

【Author】 LI Jin-long, ZHANG Ying, DENG Xin-wu, LIU Xin-zhao, TAO bo-wan, LI Yan-rong (School of Microelectronics and Solid-State Electronics, Univercity of Electronics Science and Technology of China,Chengdu 610054,China)

【机构】 电子科技大学微电子与固体电子学院电子科技大学微电子与固体电子学院 四川成都610054四川成都610054四川成都610054

【摘要】 利用反射式高能电子衍射(RHEED)在超高真空中对SrTiO3(100)、LaAlO3(100)、Si(100)单晶基片进行分析,讨论了衍射花样与晶体表面结构的对应关系,计算出表面的晶体学参数,同时采用激光分子束外延技术同质外延生长SrTiO3薄膜,根据RHEED衍射图样及强度振荡曲线实时监控薄膜的生长。

【Abstract】 In ultrahigh vacuum the surface structure of the SrTiO3,LaAlO3 and Si single crystal substrates was analysed by reflective high energy electron diffraction(RHEED). The relationship between the diffraction patterns and the surface structure was discussed and the crystal lattice constants were obtained. Homoepitaxy of SrTiO3 thin film was performed by laser molecular beam epitaxy(LMBE). With the diffraction patterns and the intensity oscillations of RHEED,the layer-by-layer growth of the thin film was in-situ monitored.

【关键词】 薄膜生长实时监测RHEED
【Key words】 thin film growthreal time monitoringRHEED
  • 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2004年02期
  • 【分类号】O484
  • 【被引频次】5
  • 【下载频次】179
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