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MFS结构钛酸铋薄膜的C-V特性研究

Study of the C-V characteristics of the In/ Bi₄Ti₃O₁₂/p-Si structure

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【Author】 GUO Dong-yun~1, WANG Yun-bo~1, YU Jun~1, WANG Yu-tian~2, WANG Bao-yi~2, WEI Long~2 (1.Department of Electronic Science and Technology,Huazhong University of Science and Technology, Wuhan 430074,China; 2.Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039,China)

【机构】华中科技大学电子科学与技术系；中国科学院高能物理研究所核分析室；中国科学院高能物理研究所核分析室湖北武汉430074；湖北武汉430074；北京100039；北京100039；

【摘要】利用sol gel方法在p Si(111)基底上制备钛酸铋薄膜。测量不同退火温度下得到的In/BTO/p Si结构的C V曲线,测量结果表明制备的MFS结构钛酸铋薄膜在合适的制备工艺下可望实现极化型存储。更多还原

【Abstract】 The capacitance with the In/ Bi₄Ti₃O₁₂/p-Si structure was fabricated by the sol-gel method. The capacitance-voltage curves of the MFS structures have been measured and analyzed. The results illustrate that the mode of switching was the polarization type and was the desired mode for the memory operation. Measured at 1MHz frequency, the memory window of In/ Bi₄Ti₃O₁₂/p-Si annealed at 650℃ for 30min was about 3.5V.更多还原