【摘要】 采用等离子体增强化学气相沉积(PECVD)技术沉积含P电介质薄膜,用于无杂质空穴扩散(IFVD)技术中InGaAsP InPMQW结构中新的包封层,替代传统的SiO2层。经X射线光电子谱(XPS)研究证明,该膜就是SiOP结构。快速退火(RTA)研究表明,该膜结构基本稳定,但膜中P原子存在明显扩散,它增强了InPMQW结构中In原子的外扩,却抑制了Ga原子的外扩。这些都明显区别于常规SiO2膜的性质。更多还原

【Abstract】 Dielectric films of SiOP was deposited by plasma enhanced chemical vapor deposition（PECVD）.It is utilized as a new encapsulant layer in impurity-free vacancy disordering（IFVD） for InGaAsP/InP multiple quantum well（MQW） intermixing instead of conventional SiO₂ layer.X-ray photon spectroscopy（XPS） study indicates that the composition of the layer is SiOP.After rapid thermal annealing（RTA）,the structure of SiOP is stable.The diffusion of P in SiOP film enhances the out-diffusion of In in InP MQW structure.However,it suppresses the out-diffusion of Ga.The characteristic of SiOP film is far from that of conventional SiO₂ films.更多还原