【摘要】 用中频孪生靶溅射法在硅片上制备了镱铒共掺氧化铝薄膜(2cm×2cm),在室温下检测到薄膜的位于1535nm的很强的光致发光光谱(PL),讨论了泵浦功率、镱铒共掺比例、退火温度对光致发光光谱强度的影响。扫描电镜(SEM)观察分析表明,中频孪生靶溅射法沉积的薄膜致密、均匀、光学缺陷少。实验结果表明:镱铒共掺薄膜的荧光强度不随泵浦功率的增加而饱和,最佳的镱铒共掺杂比例9∶1,最佳退火温度850℃,对各种实验结果给出了理论的解释。更多还原

【Abstract】 Fabricated Al₂O₃ based film doped with Er,and co-doped with Yb by medium frequency（MF） sputtering.The film size was 2 cm×2 cm.A strong photoluminescence at 1 535 nm was detected at the room temperature.Discussed the influence on photo luminescence of pump power,Yb³⁺/Er³⁺ co-doped ratio and anneal temperature.Observed the surface topography by SEM technique rather smooth and exhibited neither cracks nor voids.The result exhibited the photoluminescence didnt saturate along with the increasing of pump power,Yb³⁺/Er³⁺ co-doped ratio of optimized was 9∶1 and the optimal anneal temperature was 850 ℃.Presented a theoretics analyse to the various experiment result.更多还原