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激光剥离GaN/Al2O3材料温度分布的解析分析
Temperature Distribution Analytical Calculation for the Laser Lift-off of GaN/Al2O3 Material
【摘要】 分析了脉冲激光作用下GaN的衬底剥离过程。利用简化的一维模型,给出一种比较直观的脉冲激光辐照下GaN/Al2O3材料温度分布的解析形式,得到了分界面温度和脉冲宽度的关系。表明,单脉冲作用下分界面的温度与加热时间的平方根成正比,并得出脉冲过后随着深度变化温度梯度的分布。在连续脉冲作用时,分界面的温度呈锯齿状不断升高。
【Abstract】 The process of laser lift-off of GaN thin films from substrates was analysed.A temperature distribution analytical calculation form of the GaN/Al2O3 material irradiated by pulsed laser was presented under one dimension,and the temperature calculation form of different interface was obtained.The results show that the temperature of interface is in proportion to the square root of time when the material is irradiated by single pulse laser,however,it increases saw-like when the material is irradiated by continuous pulse laser.
【基金】 国家自然科学基金资助项目(60276029);福建省自然科学基金资助项目(A0210006)资助项目
- 【文献出处】 光电子·激光 ,Journal of Optoelectronics.laser , 编辑部邮箱 ,2004年07期
- 【分类号】TB302
- 【被引频次】2
- 【下载频次】174