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光注入X结GaAs全光开关的设计
The Design of Photo-injected X Junction GaAs All Optical Switch
【摘要】 设计了一种基于全内反射原理和光生载流子注入效应的X结全内反射(TIR)全光开关。通过对传统X结的改进提高了器件的性能。模拟结果表明,改进后的X结的消光比可以达到30dB左右。串音小于-30dB。同时分析了该全光开关所具有的速度优势,其开关速度可达100~102ns。
【Abstract】 A photo-induced carriers injection effect all optical switch was designed.Through the improvement of traditional total internal reflection(TIR) X junction,good performance was obtained.The results of simulation shown that the extinction ratio of this type X junction all optical switch is more than 30 dB and the crosstalk is less than -30 dB.The virtue of switch speed was also analyzed,its speed is about 10~0~10~2 ns.
【关键词】 X结;
光注入;
全内反射(TIR);
全光开关;
【Key words】 X junction; photo-injection; total internal reflection(TIR); all optical switch;
【Key words】 X junction; photo-injection; total internal reflection(TIR); all optical switch;
【基金】 国家自然科学基金资助项目(60177012);国家重点基础研究发展规划资助项目(G1999033104)
- 【文献出处】 光电子·激光 ,Journal of Optoelectronics.laser , 编辑部邮箱 ,2004年04期
- 【分类号】TN256
- 【被引频次】4
- 【下载频次】90