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X射线存储材料Si⁴⁺掺杂BaFBr:Eu²⁺中电子陷阱的研究（英文）

Electron Traps in Si⁴⁺-doped BaFBr∶Eu²⁺ X-ray Storage Phosphor

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【Author】 ZHENG Zhen~(1**), XIONG Guang-nan~1, YU Hua~2, ZHANG Li-ping~1,MA Yu-ping~1, CHENG Shi-ming~3, YAN Xiao-ming~3(1.Institute of Material Physics,Tianjin University of Technology,Tianjin 300191,China; 2.College of Physics,Nankai University,Tianjin 300071,China; 3.Research Center for Analysis and Measurement,Fudan University,Shanghai 200433,China)

【机构】天津理工大学材料物理研究所；南开大学物理学院；复旦大学分析测试中心；复旦大学分析测试中心天津300191；天津300191；天津300071；上海200433；上海200433；

【摘要】在BaFBr:Eu2 + 中掺入Si4+ 合成了一种新的X射线影像板材料 ,其主要光激励发光 (PSL)性能 ,如射线敏感度和长波可激发性都优于低价阳离子掺杂的BaFBr∶Eu2 + 。用喇曼和顺磁共振 (EPR)等手段表征了掺Si4+ 后BaFBr∶Eu2 + 中电子陷阱的结构 ,并根据此结构解释了其激发波长的红移量比其它低价阳离子掺杂都高的原因。更多还原

【Abstract】 Samples of BaSiFBr∶Eu²⁺ were synthesized and their photo-stimulated luminescence（PSL） properties were measured.It was found that this new phosphor is more radiation sensitive and longer wavelength photo-stimulable than BaFBr∶Eu²⁺ and its lower-valence cation doped derivatives.By using Raman scattering Ba²⁺ vacancies and Si⁴⁺ were characterized.Electron paramagnetic resonance（EPR） was also used to investigate electron traps in the phosphor.At last,the transition of excited state of electrons in the perturbed electron traps was discussed to interpret the red shift of the stimulating spectrum.更多还原