【摘要】 用化学气相沉积法制备了厚度为 2 μm左右、掺杂比为 ( 2～ 6)× 1 0 -6的硼轻掺杂非晶硅半导体薄膜 ,测量了样品光电流随掺杂比、电压和光波长的变化。结果表明 ,非晶硅薄膜的光电流随掺杂比、电场强度和光功率密度的增大而增大 ,光电流灵敏度最高频谱范围随掺杂比和电场强度的增大而增大 ,掺杂比改变对光电流的影响比电场强度和光功率密度变化的影响更明显更多还原

【Abstract】 The a Si films, about 2 μm in thickness, (2～6)×10 -6 in doping ratio, and light doped with boron, were grown by chemical vapor deposition. The variation in photocurrent of a Si films with doping ratio, voltage and optical power density was discussed by experiments. The results show that as the doping ratio, field intensity and optical power density increases, the photocurrent of a Si films increases. The photocurrent frequency range of maximum sensitivity of a Si films increases as doping ratio and field intensity increase. Influence of doping ratio changing on photocurrent of a Si films is more obvious than that of field intensity and optical power density. The reason for the arisen phenomenon was interpreted.更多还原