【摘要】 本文基于BSIM标准研究了现代深亚微米级MOSFET器件的建模和特征提取方法 ,着重在于短沟道效应方面 ,其中测试样品由MicronTM公司提供 ,最短沟道长度仅为 0 16微米 .内容包括一般短沟道效应、基板效应和漏极感应势垒降低效应 (简称DIBL效应 )等 .研究表明 ,实验数据和BSIM模型结果较好吻合 ,证明文中方法的有效性以及较好的应用前景 .更多还原

【Abstract】 In this paper the methodology of modeling and characterization of modern MOSFET ,with emphasis on short-channel effects of deep-submicorns devices up to 0.16 um,is researched based on BSIM.The threshold voltage model of Micron TM bulk device is made to demostrate the processing of modeling and characterization.The results of device model,cosisting of normal short-channel effect, body effect and DIBL (drain induced barrier lowering) effect,show good agreement between BSIM model and experimental data which proves effectiveness and good potential of the methodology.更多还原