【摘要】 通过分析钌基厚膜应变电阻的隧道势垒模型,提出力敏模型。用Bi₂O₃和RuO₂合成Bi₂Ru₂O₇并进行试验,发现应变系数随导电相粒径的增大而增大。用力敏模型解释了这一现象,并解释了其他力敏现象,诸如应变系数随势垒高度的增大而增大。更多还原

【Abstract】 We constructed a strain sensitive model through the analysis of the Ru-based thick film strain resistor’s tunneling barrier model. Bi2Ru2O7 was synthesized with Bi2O3 and RuO2 . The gauge factor (GF) aggrandizes with the conductive particles radius’ accretion. We interpreted this phenomenon through the strain sensitive model, and explained the other strain sensitive phenomenon, such as the GF mounts up with the barrier height’ s augmention.更多还原