【摘要】 采用电阻蒸发镀膜技术制备了Ga₂O₃薄膜,并进行了500℃和800℃的大气热处理。分别用俄歇电子能谱（AES）和X射线衍射（XRD）分析了它们的成分和晶体结构。实验结果表明:采用电阻蒸发镀膜技术制备的Ga₂O₃薄膜呈现非晶结构,薄膜成分沿深度方向的均匀性较差。经过500℃热处理后,薄膜转化为单斜结构（β相）,薄膜成份的均匀性得到改善。经800℃热处理后,可以得到成份均匀的β-Ga₂O₃薄膜。并且,在不同的热处理温度下,薄膜的结晶取向也有所不同。更多还原

【Abstract】 The Ga2O3 films were prepared by the thermal evaporation technique, and heat-treated in the atmosphere at 500℃ and 800℃. The component and structure of gallium oxide films were analyzed by Auger electron spectroscopy (AES) and Xrray Diffraction (XRD) , respectively. The results show that the Ga2O3 films prepared by the thermal evaporation technique are amorphous,. and the component distribution of the films is not homogeneous along the depth. The monoclinic system was observed in amorphous thin films after 500℃ heat - treated in the atmosphere, and the component uniformity of the films was improved. After 800℃ heat-treated,β-GaO3 thin films with homogeneous component were gained. With the difference of heat-treated temperature, the crystal orientation changes, too.更多还原