【摘要】 通过均相沉淀法制备了纳米CeO₂超细粉体,并配制成抛光液对硅片进行化学机械抛光（CMP）,研究了纳米CeO₂磨料对硅片的抛光效果,通过建立的接触模型进一步地解释了纳米级磨料的化学机械抛光机理。实验结果分析表明:由于纳米磨料粒径小,切削深度小,材料是以塑性流动的方式去除。使用纳米CeO₂磨料最终在1μm的范围内达到了微观表面粗糙度Ra为0.103 nm的超光滑表面,而且表面的微观起伏更趋向于平缓。更多还原

【Abstract】 Nano-powder of CeO₂ was prepared by homogenous precipitation and was compounded into polishing slurryfor chemical - mechanical - polishing of silicon wafer.The polishing effect of nano-cerium dioxide was studied, and thechemical-mechanical poishing mechanism with nano-sized abrasives was further studied by the contact mode.The cuttingdepth of the nano-sized abrasives was very small and the removal of material was caused by means of plastic flowage. At last asuper-smooth surface with a roughness of 0.103 nm was obtained within 1 μm area polished by nano-sized cerium dioxide andits surface undulation was inclined to smaller.更多还原