【摘要】 讨论了在用热丝化学汽相沉积(HFCVD)法沿Si(111)晶面异质生长SiC薄膜的过程中衬底碳化工艺对SiC成膜的影响。利用扫描电子显微镜(SEM)、X射线衍射谱(XRD)、透射电子显微镜(TEM)和俄歇电子能谱(AES)等分析手段,对衬底碳化进行研究。并对典型工艺条件(钨丝温度2 000℃,衬底温度800℃,衬底碳化时间5 min)下制备的样品的碳化层进行分析,得出其厚度约为20 nm,由富C的3C-SiC层,3C-SiC层和含C的Si层组成。更多还原

【Abstract】 Discussed is the effect of the carbonization of the substrates on the growing of SiC/Si film on on-axis Si(111) substrates by hot filament chemical vapor deposition (HFCVD). The carbonization of the substrates was investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and scanning auger microprobe (AES). A sample is analyzed, which is made under the typical conditions (hot filament 2 000℃, substrate 800℃, and carbonation time 5 minute). Its carbonated layer, 20 mm thick, consists of a 3C-SiC layer of rich-C, a 3C-SiC layer and a Si layer containing C element from the surface to the inside.更多还原