【摘要】 对电阻率为5 ·cm的p型单晶硅,在高温条件下采用扩散金属锰的方法,得到高补偿硅。并在室温(25℃)和液氮温度(196℃)下,测试了这种高补偿硅材料对光强的敏感性。测试结果表明:这种材料是一种光敏感材料,其敏感性受外加的电压、样品的温度及补偿后样品的电阻率影响。更多还原

【Abstract】 Highly compensated Si were acquired by diffusing Mn into p-type silicon crystal of 5 W·cm at high temperature.Its light-sensitive characteristic was measured at 25C and 196C. The measurement results show that obtained materials are sensitive to light and the sensitivity is affected by applied voltage, sample temperature and their resistivity.更多还原