【摘要】 介绍了绝缘栅双极型晶体管IGBT(InsulatedGateBipolarTransistor)器件驱动电路设计的一般要求,对EXB841芯片的工作过程作了深入的分析,研究了EXB841对IGBT的开通和关断以及过流保护的原理,指出了用EXB841直接驱动IGBT时存在的问题和不足,主要是过流保护的阀值太高、关断不可靠及在软关断时没有对外部输入信号进行封锁。同时,提出了针对这些不足在设计驱动电路时应当采取的几种有效方法。最后,运用EXB841及其他器件设计和优化了一个IGBT的驱动电路,该驱动电路通过电力电子仿真软件PSPICE(SimulationProgramwithICEmphasis)仿真和试验证明能够有效地对IGBT器件进行驱动和过电流保护。更多还原

【Abstract】 The general demands of IGBT ( Insulated Gate Bipolar Transistor ) driving circuitry are introduced and the working process of EXB841driving circuitry is analyzed in detail.With the deep research on the principle of EXB841 ’ s direct driving and protecting IGBT ,some problems are pointed out ,which are the over - current protection setting is too high ,the switch - off process is unreliable and the external signals are not locked out during soft switch - off.Some effective coun - termeasures are put forward.An EXB841 - based IGBT driving circuitry is designed and optimized ,which is verified by PSPICE ( Simulation Program with IC Emphasis ) simulation and experiments.This project is supported by Scientific and Technological Brainstorm Project of Jiangsu Province ( BE2003043 ) .更多还原